Formation of nanoripples on ZnO flat substrates and nanorods by gas cluster ion bombardment

• Xiaomei Zeng,
• Vasiliy Pelenovich,
• Bin Xing,
• Rakhim Rakhimov,
• Wenbin Zuo,
• Alexander Tolstogouzov,
• Chuansheng Liu,
• Dejun Fu and
• Xiangheng Xiao

Beilstein J. Nanotechnol. 2020, 11, 383–390, doi:10.3762/bjnano.11.29

• material than atomic beams, the high energy density when a cluster interacts with a surface, and nonlinear sputtering effects [13]. One of the most prominent properties of cluster beams is the smoothing effect on moderately rough surfaces [14]. The smoothing effect takes place at normal incidence of the

• explained by the smoothing effect, which is also observed at grazing incidence angles, when the cluster ion beam can effectively remove all surface irregularities [20]. Besides, at grazing incidence angles, due to a small transverse velocity the energy transfer from GCIB to the surface is reduced, which in

Sputtering of silicon nanopowders by an argon cluster ion beam

• Xiaomei Zeng,
• Vasiliy Pelenovich,
• Zhenguo Wang,
• Wenbin Zuo,
• Sergey Belykh,
• Alexander Tolstogouzov,
• Dejun Fu and
• Xiangheng Xiao

Beilstein J. Nanotechnol. 2019, 10, 135–143, doi:10.3762/bjnano.10.13

• near 17 keV. The dose and energy dependence of the sputtering yield was explained by the competition of the finite size effect and the effect of debris formation. Keywords: finite size effect; gas cluster ion beam; silicon nanoparticles; smoothing effect; sputtering; Introduction Etching using gas

• yields (see a region of high doses, Figure 3b). The roughness of the pressed nanopowder pellets irradiated at different doses and energies is shown in Figure 4. For the samples irradiated at 34.5 keV the smoothing effect is observed with a roughness value decreasing from initial 6.7 to final 3.9 nm at a

• are not clear yet. At the energy of 17.3–34.5 keV the smoothing effect accompanied with the effective ion milling is appeared, which reduces the finite size effect and the sputtering rate. Further, at higher energy (up to 69 keV) the smoothing effect is retained. The dose dependence of the roughness

Organic and inorganic–organic thin film structures by molecular layer deposition: A review

• Pia Sundberg and
• Maarit Karppinen

Beilstein J. Nanotechnol. 2014, 5, 1104–1136, doi:10.3762/bjnano.5.123

Challenges in realizing ultraflat materials surfaces

• Takashi Yatsui,
• Wataru Nomura,
• Fabrice Stehlin,
• Olivier Soppera,
• Makoto Naruse and
• Motoichi Ohtsu

Beilstein J. Nanotechnol. 2013, 4, 875–885, doi:10.3762/bjnano.4.99

• by the fact that the Ra value remained the same after 24 hours of etching. To verify that the smoothing effect originated from the DPP process, the surface roughness was compared by using AFM images taken after conventional photoetching, in which a photon energy higher than Ed was used and after DPP